Ilesanmi Adesida

简介

The Nanoscale Processing and Devices Group investigates the processing of semiconductors and other materials at the nanometer scale level and applies these techniques to the realization of ultra-high speed optoelectronic devices and circuits. Electron beam lithography with novel resist materials coupled with various dry etching methods are used to achieve nanoscale patterning. The impact of processing at these dimensions are investigated on the performance of heterostructure field effect transistors, photonic, and other quantum effect devices in compound semiconductor materials such as Indium Phosphide, Gallium Nitride, and Silicon Germanium. The Group conducts research on various aspects of the fabrication of these devices including ohmic contact formation, Schottky contact formation, iso

教育经历

• Ph.D. Electrical Engineering University of California, Berkeley 1979
• M.S. Electrical Engineering University of California, Berkeley 1975
• B.S. Electrical Engineering University of California, Berkeley 1974
• Provost and Vice Chancellor for Academic Affairs (2012-2015)
• Dean, College of Engineering (2006-2012)
• Interim Dean, College of Engineering (2005-2006)
• Donald Biggar Willet Professor of Engineering (2003 to present)
• Professor, Materials Science and Engineering (2001 to present)
• Director, Center for Nanoscale Science and Technology (2003-2012)
• Director, Micro and Nanotechology Laboratory (MNTL) (2000-2005)